ETUDE DE LA SEGREGATION INTERGRANULAIRE DU SOUFRE DANS LE CUIVRE.MOYA F; MOYA GONTIER GE.1975; J. PHYS., COLLOQ.; FR.; DA. 1975; VOL. 36; NO 4; PP. C4157-C4164; ABS. ANGL.; BIBL. 10 REF.; (COLLOQ. INT. JOINTS INTERGRANULAIRES METAUX; SAINT-ETIENNE; 1975)Conference Paper

LATTICE LOCATION OF LOW-Z IMPURITIES IN MEDIUM-Z TARGETS USING ION-INDUCED X-RAYS. I. ANALYTICAL TECHNIQUE.CHEMIN JF; MITCHELL IV; SARIS FW et al.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 2; PP. 532-536; BIBL. 19 REF.Article

LATTICE LOCATION OF LOW-Z IMPURITIES IN MEDIUM-Z TARGETS USING ION-INDUCED X-RAYS. II. PHOSPHORUS AND SULFUR IMPLANTS IN GERMANIUM SINGLE CRYSTALS.CHEMIN JF; MITCHELL IV; SARIS FW et al.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 2; PP. 537-541; BIBL. 16 REF.Article

GROWTH OF GAP SINGLE CRYSTALS BY THE SYNTHESIS, SOLUTE DIFFUSION METHOD.GILLESSEN K; MARSHALL AJ.1976; J. CRYST. GROWTH; NETHERL.; DA. 1976; VOL. 32; NO 2; PP. 216-220; BIBL. 12 REF.Article

SEGREGATION INTERGRANULAIRE DES ELEMENTS DE LA FAMILLE DU SOUFRE DANS LE FER PUR.PICHARD C; GUTTMANN M; RIEU J et al.1975; J. PHYS., COLLOQ.; FR.; DA. 1975; VOL. 36; NO 4; PP. C4.151-C4.155; ABS. ANGL.; BIBL. 18 REF.; (COLLOQ. INT. JOINTS INTERGRANULAIRES METAUX; SAINT-ETIENNE; 1975)Conference Paper

BERYLLIUM BERYLLIUM AND SULFUR ION-IMPLANTED PROFILES IN GAAS.COMAS J; PLEW L.1976; J. ELECTRON. MATER.; U.S.A.; DA. 1976; VOL. 5; NO 2; PP. 209-221; BIBL. 12 REF.Article

DOPAGE DES CRISTAUX DE GAP OBTENUS A PARTIR DE GALLIUM FONDUZYKOV AM; OLEJNIKOV YU G; SAMORUKOV BE et al.1974; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1974; VOL. 10; NO 9; PP. 1593-1595; BIBL. 12 REF.Article

DEFAUTS DE CROISSANCE DONT L'ORIGINE N'EST PAS DUE AUX DISLOCATIONS DANS LES MONOCRISTAUX DE GAPOL'KHOVIKOVA TI; VIDANOV AP; SAFONOVA GN et al.1974; FIZ. TVERD. TELA; S.S.S.R.; DA. 1974; VOL. 16; NO 9; PP. 2813-2814; BIBL. 4 REF.Article

LIGTH EFFECT ON AMORPHOUS CRYSTAL TRANSITION IN SSE_22.5KOTKATA MF; EL MOUSLY MK; AYAD FM et al.1979; ACTA PHYS. ACAD. SCI. HUNGAR.; HUN; DA. 1979; VOL. 46; NO 1; PP. 19-26; BIBL. 21 REF.Article

PHOTO-EFFECT ON CRYSTALLIZATION KINETICS OF AMORPHOUS SELENIUM DOPED WITH SULPHURKOTKATA MF; AYAD FM; EL MOUSLY MK et al.1979; J. NON-CRYST. SOLIDS; NLD; DA. 1979; VOL. 33; NO 1; PP. 13-22; BIBL. 16 REF.Article

CARBON AND SULPHUR ON THE (111) AND (001) FACES OF NICKEL DURING THERMAL TREATMENT IN ULTRA-HIGH VACUUM AND IN AN OXYGEN ATMOSPHERE.MROZ S; KOZIOL C; KOLACZKIEWICZ J et al.1976; VACUUM; G.B.; DA. 1976; VOL. 26; NO 2; PP. 61-65; BIBL. 9 REF.Article

THE ROLE OF IMPURITIES IN THE STABILITY OF ZNO SURFACES.HOPKINS BJ; LEYSEN R; TAYLOR PA et al.1975; SURF. SCI.; NETHERL.; DA. 1975; VOL. 48; NO 2; PP. 486-496; BIBL. 13 REF.Article

STRUCTURE DE DEFAUTS, PROPRIETES ELECTRIQUES ET DE DIFFUSION DE CDO DOPE PAR LE SOUFRESUNTSOV NV; ARKHAROV VI; ZHURAVLEV NL et al.1980; DOKL. AKAD. NAUK SSSR; ISSN 0002-3264; SUN; DA. 1980; VOL. 251; NO 4; PP. 869-871; BIBL. 13 REF.Article

PRECIPITATION AND RE-SOLUTION OF IMPURITIES AT THE SURFACE OF INDIUM ON TRAVERSING THE MELTING-POINT.GETTINGS M; RIVIERE JC.1977; SURF. SCI.; NETHERL.; DA. 1977; VOL. 68; PP. 64-70; BIBL. 8 REF.; (INTERDISCIPLINARY SURF. SCI. CONF. 3. PROC.; YORK; 1977)Conference Paper

PURE AND DOPED INDIUM PHOSPHIDE BY VAPOUR PHASE EPITAXY.CLARKE RC; TAYLOR LL.1978; J. CRYST. GROWTH; NETHERL.; DA. 1978; VOL. 43; NO 4; PP. 473-479; BIBL. 17 REF.Article

GROWTH OF CRYSTALLINE PHASE IN AMORPHOUS SOLID AND LIQUID SSE₂₀.EL MOUSLY MK; KOTKATA MF; SALAM SA et al.1978; J. PHYS. C; G.B.; DA. 1978; VOL. 11; NO 6; PP. 1077-1083; BIBL. 12 REF.Article

N-TYPE DOPING OF INDIUM PHOSPHIDE BY IMPLANTATIONDAVIES DE; LORENZO JP; RYAN TG et al.1978; SOLID-STATE ELECTRON.; GBR; DA. 1978; VOL. 21; NO 7; PP. 981-985; BIBL. 20 REF.Article

"SURFACE EXCHANGE" DOPING OF MBE GAAS FROM S AND SE "CAPTIVE SOURCES"WOOD CEC.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 8; PP. 770-772; BIBL. 11 REF.Article

CONTROL OF SULFUR DOPING FOR GALLIUM ARSENIDE EPITAXIAL LAYERS.SARVA MA.1976; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1976; VOL. 123; NO 10; PP. 1498-1502; BIBL. 19 REF.Article

TRANSMISSION ELECTRON MICROSCOPY STUDY OF MICRODEFECTS IN DISLOCATION-FREE GAAS AND INP CRYSTALSKAMEJIMA T; MATSUI J; SEKI Y et al.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 5; PP. 3312-3321; BIBL. 27 REF.Article

HVEM INVESTIGATIONS OF CRYSTAL DEFECTS IN S-DOPED LEC-GAP CRYSTALSUMENO M; KAWABE H; DOI K et al.1979; PHILOS. MAG., A; GBR; DA. 1979; VOL. 39; NO 2; PP. 183-194; BIBL. 22 REF.Article

X-RAY STUDY OF LEC-GROWN INP CRYSTALSMATSUI J; WATANABE H; SEKI Y et al.1979; J. CRYST. GROWTH; NLD; DA. 1979; VOL. 46; NO 4; PP. 563-568; BIBL. 10 REF.Article

ETUDE DE L'INTERACTION DONNEUR-ACCEPTEUR EN SOLUTION SOLIDE A BASE DE INAS LORS DU DOPAGE PAR ZN, S, SE ET TEGLAZOV VM; SHVEDKOV EI.1978; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; SUN; DA. 1978; VOL. 14; NO 6; PP. 1027-1030; BIBL. 8 REF.Article

CONCURRENCE DES ATOMES D'INSERTION EN CAS DE SEGREGATIONS AU NIVEAU DES JOINTS DE GRAINS DANS LE MOLYBDENE ET LE TUNGSTENEBURMAKA LS; DRACHINSKIJ AS; IVASHCHENKO YU N et al.1976; FIZ. METALLOV METALLOVED.; S.S.S.R.; DA. 1976; VOL. 42; NO 5; PP. 1089-1092; BIBL. 19 REF.Article

PARTICULARITES DU DOPAGE DES COUCHES EPITAXIQUES DE PHOSPHURE DE GALLIUM PAR LE SOUFREKUZNETSOV VV; SOROKIN VS; SHAMRAJ VB et al.1980; IZV. AKAD. NAUK SSSR, NEORG. MATER.; ISSN 0002-337X; SUN; DA. 1980; VOL. 16; NO 5; PP. 773-776; BIBL. 16 REF.Article